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APTC80DDA15T3
Dual Boost chopper
Super Junction MOSFET
VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features *
Q2 4
Power Module
13 14
CR1 22 7
CR2
23 Q1 26
8
27 29 15 30 31 R1 32 16
3
* * * *
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTC80DDA15T3 - Rev 0 September, 2004
Max ratings 800 28 21 110 30 150 277 24 0.5 670
Unit V A
APTC80DDA15T3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A Min 800
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Typ
Max 50 375 150 3.9 150
Unit V A m V nA
Tj = 25C Tj = 125C 2.1 3
VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125C VGS = 15V VBus = 533V ID = 28A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5
Min
Typ 4507 2092 108 180 22 90 10 13 83 35 486 278 850 342
Max
Unit pF
nC
ns
J J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
Test Conditions VR=1000V
50% duty cycle
Min 1000 Tj = 25C Tj = 125C
T c = 100C
Typ
Max 250 500
Unit V A A
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
IF = 60A VR = 667V di/dt=200A/s
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
280 350 760 3600
ns nC
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTC80DDA15T3 - Rev 0 September, 2004
IF = 60A IF = 120A IF = 60A
Tj = 125C
60 1.9 2.2 1.7
2.5 V
APTC80DDA15T3
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 Min Typ Max 0.45 0.9 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
1
12
APT website - http://www.advancedpower.com
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APTC80DDA15T3 - Rev 0 September, 2004
17
28
APTC80DDA15T3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 Single Pulse 0.1 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 I D, Drain Current (A) 50 60
VGS=20V
Thermal Impedance (C/W)
1
Transfert Characteristics 100
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS =15&10V
6V 5.5V 5V 4.5V 4V
ID, Drain Current (A)
6.5V
80 60 40 20 0 0
TJ =25C TJ =125C T J=-55C
1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 30 ID, DC Drain Current (A)
Normalized to V GS=10V @ 14A
VGS=10V
25 20 15 10 5 0 TC, Case Temperature (C)
APTC80DDA15T3 - Rev 0 September, 2004
25
50
75
100
125
150
APT website - http://www.advancedpower.com
4-6
APTC80DDA15T3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 14A
100
limited by RDSon
100s
10
1ms 10ms Single pulse TJ =150C 1 100ms
1
0 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200
APTC80DDA15T3 - Rev 0 September, 2004
VDS=640V ID=28A T J=25C V DS =160V VDS=400V
10000
Ciss Coss Crss
1000
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website - http://www.advancedpower.com
5-6
APTC80DDA15T3
Delay Times vs Current Rise and Fall times vs Current
100
t d(off) td(on) and td(off) (ns)
50 40
t r and tf (ns)
V DS=533V RG=2.5 T J=125C L=100H
tf
80 60 40 20 0 10 20 30 40 I D, Drain Current (A)
Switching Energy vs Current
30 20 10 0
VDS=533V RG=2.5 T J=125C L=100H
tr
t d(on)
50
10
20 30 40 I D, Drain Current (A)
50
Switching Energy vs Gate Resistance
1500 1200 900 600 300 0
Switching Energy (J)
Eon and Eoff (J)
VDS=533V RG=2.5 TJ=125C L=100H
2500 2000 1500 1000 500 0
V DS=533V ID=28A T J=125C L=100H
Eon
Eon Eoff
Eoff
10
20 30 40 I D, Drain Current (A)
50
0
5 10 15 20 Gate Resistance (Ohms)
25
Operating Frequency vs Drain Current
350
Frequency (kHz)
ZVS
300 250 200 150 100 50 0 6
Hard switching ZCS
VDS=533V D=50% RG=2.5 TJ=125C TC=125C
IDR , Reverse Drain Current (A)
400
Source to Drain Diode Forward Voltage 1000
100
TJ=150C
10
TJ=25C
1 0.2
APTC80DDA15T3 - Rev 0 September, 2004
8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A)
0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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